p-channel rad hard pd - 90885c pre-irradiation (ref:mil-prf-19500/662) repetitive avalanche and dv/dt rated jansr2n7244u hexfet ? transistor jansf2n7422u 1/6/99 IRHN9150 product summary part number bv dss r ds(on) i d IRHN9150 -100v 0.080 w -22a irhn93150 -100v 0.080 w -22a features: n radiation hardened up to 3 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- and post-electrical test conditions n repetitive avalanche rating n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed n surface mount n lightweight www.irf.com 1 -100 volt, 0.073 w w w w w , rad hard hexfet international rectifiers p-channel rad hard technology hexfets demonstrate e xcellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 3 x 10 5 rads (si). u nder identical pre- and post- radiation test conditions, international rectifiers p-channel rad hard hexfets retain identical electrical specifica- tions up to 1 x 10 5 rads (si) total dose. no compensation in gate drive circuitry is required. these devices are also ca- pable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal operation within a few microseconds. single event effect (see) testing of in- ternational rectifier p-channel rad hard hexfets has demonstrated virtual immunity to see failure. since the p- channel rad hard process utilizes international rectifiers patented hexfet technology, the user can expect the high- est quality and reliability in the industry. p-channel rad hard hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well-suited for applications such as switching power sup- plies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. absolute maximum ratings parameter IRHN9150, irhn93150 units i d @ v gs = -12v, t c = 25c continuous drain current -22 i d @ v gs = -12v, t c = 100c continuous drain current -14 i dm pulsed drain current ? - 88 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? -22 a e ar repetitive avalanche energy ? 15 mj dv/dt peak diode recovery dv/dt ? -23 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6mm) from case for 10s weight 2.6 (typical) g o c a irhn93150
IRHN9150, irhn93150,jansr-,jansf-,2n7422u devices pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -100 v v gs = 0v, i d = -1.0ma d bv dss / d t j temperature coefficient of breakdown -0.093 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source 0.080 v gs = -12v, i d = -14a on-state resistance 0.085 w v gs = -12v, i d = -22a v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 11 s ( )v ds > -15v, i ds = -14a ? i dss zero gate voltage drain current -25 v ds = 0.8 x max rating,v gs =0v -250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 200 v gs =-12v, i d = -22a q gs gate-to-source charge 35 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge 48 t d (on) turn-on delay time 40 v dd = -50v, i d =-22a, t r rise time 170 r g = 2.35 w t d (off) turn-off delay time 190 t f fall time 190 l d internal drain inductance 2.0 l s internal source inductance 4.1 c iss input capacitance 4300 v gs = 0v, v ds = -25v c oss output capacitance 1100 pf f = 1.0mhz c rss reverse transfer capacitance 310 na w ? nh ns measured from dr a i n l e a d , 6mm (0.25 in) from pac kage t o c e n t e r o f d i e. measured from source lead, 6mm (0.25 in) from pac kage to source bonding pad. modified mosfet symbol sho w - i n g t h e i n t e r nal inductances . m a source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) -22 modified mosfet symbol sho w i n g t h e i n t e gr a l i sm pulse source current (body diode) ? -88 r eve r s e p - n j u n c t i o n r e c t i f i e r. v sd diode forward voltage -3.0 v t j = 25c, i s = -22a, v gs = 0v ? t rr reverse recovery time 300 ns t j = 25c, i f = -22a, di/dt -100a/ m s q rr reverse recovery charge 1.5 m cv dd -50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 0.83 r thj-pcb junction-to-pc board 6.6 soldered to a 1 square copper-clad board c/w
IRHN9150, irhn93150, jansr-,jansf-,2n7422u devices www.irf.com 3 table 1. low dose rate ? ? IRHN9150 irhn93150 parameter 100k rads (si) 300k rads (si) units test conditions ? min max min max bv dss drain-to-source breakdown voltage -100 -100 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage ? -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs = -20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -25 -25 a v ds =0.8 x max rating, v gs =0v r ds(on)1 static drain-to-source ? 0.080 0.080 w v gs = -12v, i d = -14a on-state resistance one v sd diode forward voltage ? -3.0 -3.0 v t c = 25c, i s = -22a,v gs = 0v table 2. high dose rate ? 10 11 rads (si)/sec 10 12 rads (si)/sec parameter min typ max min typ max units test conditions v dss drain-to-source voltage -80 -80 v applied drain-to-source voltage during gamma-dot i pp -100 100 a peak radiation induced photo-current di/dt -800 -160 a/sec rate of rise of photo-current l 1 0.1 0.5 h circuit inductance required to limit di/dt let (si) fluence range v ds bias v gs bias ion (mev/mg/cm 2 ) (ions/cm 2 ) (m) (v) (v) ni 28 1x 10 5 ~41 -100 5 table 3. single event effects international rectifier radiation hardened hexfets are tested to verify their hardness capability. the hardness assurance program at international rectifier com prises three radiation environments. every manufacturing lot is tested in a low dose rate (total dose) environment per mil-std-750, test method 1019 condition a. international rectifier has imposed a standard gate condition of -12 volts per note 5 and a v ds bias condition equal to 80% of the device rated volt- age per note 6. pre- and post- irradiation limits of the devices irradiated to 1 x 10 5 rads (si) are identical and are presented in table1, column1, IRHN9150. post-ir- radiation limits of the devices irradiated to 3 x 10 5 rads (si) are presented in table 1, column 2, irhn93150. the values in table 1 will be met for either of the two low dose rate test circuits that are used. both pre- and post-irradiation performance radiation performance of rad hard hexfets are tested and specified using the same drive circuitry and test conditions in order to provide a direct com- parison. it should be noted that at a radiation level of 3 x 10 5 rads (si) the only parametric limit change is v gs(th) maximum. high dose rate testing may be done on a special re- quest basis using a dose rate up to 1 x 10 12 rads (si)/sec (see table 2). international rectifier radia- tion hardened p-channel hexfets are considered to be neutron-tolerant, as stated in mil-prf-19500 group d. international rectifier radiation hardened p-channel hexfets have been characterized in heavy ion single event effects (see) environments. single event effects characterization is shown in table 3. radiation characteristics
IRHN9150, irhn93150,jansr-,jansf-,2n7422u devices pre-irradiation 4 www.irf.com 10 100 5 6 7 8 9 10 v = -50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -22a - -
IRHN9150, irhn93150, jansr-,jansf-,2n7422u devices www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 1000 2000 3000 4000 5000 6000 7000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -22a v = -20v ds v = -50v ds v = -80v ds 1 10 100 0.0 1.0 2.0 3.0 4.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms pre-irradiation
IRHN9150, irhn93150,jansr-,jansf-,2n7422u devices pre-irradiation 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 4 8 12 16 20 24 t , case temperature ( c) -i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit fig 10b. switching time waveforms v ds -12v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f
IRHN9150, irhn93150, jansr-,jansf-,2n7422u devices www.irf.com 7 fig 12c. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -9.8a -14a -22a fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds v dd driver a 15v -20v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge -12v d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - -12v -12v pre-irradiation
IRHN9150, irhn93150,jansr-,jansf-,2n7422u devices pre-irradiation 8 www.irf.com ? repetitive rating; pulse width limited by maximum junction temperature. refer to current hexfet reliability report. ? @ v dd = -25v, starting t j = 25c, e as = [0.5 * l * (i l 2 ) ] peak i l = -22a, v gs = -12v, 25 r g 200 w ? i sd -22a, di/dt -450a/ m s, v dd bv dss , t j 150c suggested rg = 2.35 w ? pulse width 300 m s; duty cycle 2% irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. v ds = 0.8 rated bv dss (pre-irrradiation) applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? this test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 mev), 30 nsec pulse. ? all pre-irradiation and post-irradiation test conditions are identical to facilitate direct comparison for circuit applications. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 1/99 case outline and dimensions smd-1 smd-1
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